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FDS8333C - 30V N & P-Channel PowerTrench MOSFETs

General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V.
  • 3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS =.
  • 10 V RDS(ON) = 200 mΩ @ V GS =.
  • 4.5 V.
  • Q2.
  • Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. Q2 D1 D D1 D DD2 D2 D 5 6 Q1 4 3 2 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 7 8 S Absolute Maximum Ratings.

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FDS8333C August 2002 FDS8333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V –3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS = –10 V RDS(ON) = 200 mΩ @ V GS = –4.5 V • Q2 • • • Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package.