FDS8333C Datasheet | Fairchild Semiconductor

August 2002 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V - 3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS = - 10 V RDS(ON) = 200 mΩ @ V GS = - 4.5 V - Q2 - - - Low gate charge High performance trench technology for extremely...