FDS8333C mosfets equivalent, 30v n & p-channel powertrench mosfets.
* Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V
–3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS =
–10 V RDS(ON) = .
where low in-line power loss and fast switching are required.
Features
* Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10.
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for.
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